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China aims for over 100 mln metric tons of coal reserve capacity by 2030_我的网站

一 | 8月24日消息,据Wccftech报道,SK海力士近日详细阐述了其HBM技术路线图的加速路径,核心举措包括引入EMIB封装方案,并明确将3D集成作为长期目标。 当前,HBM通过TSV(硅通孔)技术将多层DRAM芯片堆叠于基础裸片之上,最高可支持16层堆叠。

二 | HBM与计算模块(XPU,涵盖GPU、TPU等)相互独立,通过2.5D封装共同安装于同一中介层。

三 | (ECNS) -- China aims to build more than 100 million metric tons of annual coal production reserve capacity by 2030, according to the 15th Five-Year Plan for Coal Industry Development, jointly released by the National Development and Reform Commission (NDRC) and the National Energy Administration (NEA) on Monday. By 2030, China's capacity to ensure secure coal production and supply is expected to be further strengthened, while the structure and distribution of coal production will continue to improve. Large modern coal mines are expected to account for 87% of the country's total production capacity, according to the plan. The plan also aims to significantly improve coal mine safety, green development, and the clean and efficient use of coal. Smart mines are expected to account for 75% of total production capacity, while the development of a more diversified coal-based industrial structure will be accelerated. Coal consumption is expected to peak during the plan period, alongside the establishment of a more robust mechanism for balancing supply and demand. The plan places energy security alongside the green transition as key priorities. Focusing on the development of a modern coal industry system, it outlines nine major tasks, including optimizing coal development and spatial distribution, accelerating industrial restructuring, and strengthening the production, supply, storage and sales system. Other priorities include advancing the green and low-carbon transition, improving the clean and efficient use of coal, and promoting technological innovation. The plan also calls for stronger safety management, modernized industry governance, and a higher level of modernization across the sector. (By Tang Yuxian)
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每个HBM模块配备1024位I/O接口(共16通道),通过物理接口层(PHY)与XPU相连。

四 | 而下一代HBM4将首次将I/O接口扩展至2048位,这将是自2015年HBM问世以来的最大规格变革。 在封装工艺上,目前主要存在两大技术路径:热压键合配合非导电膜(TC+NCF)和整体回流焊配合模塑底部填充(MR+MUF)。前者在应对芯片翘曲方面更具优势,但热阻较高且生产效率偏低;后者生产效率更高、热阻更低,却更易出现翘曲及间隙填充缺陷。

五 |
面向未来,SK海力士计划引入混合键合技术,以消除芯片堆叠中的凸块并缩小间距。同时,公司正在开发名为“I-HBM”的局部散热技术(类似三星的HPB方案),旨在优化传热路径,更高效地分散热量,为更高层数的堆叠铺路。 在2.5D封装解决方案方面,SK海力士目前已在传统CoWoS-L、CoWoS-R和CoWoS-S之外,新增了英特尔的EMIB技术,形成更丰富的异构集成选项。 此外,市场传言SK海力士与英特尔有望在存储领域组建合资公司,进一步深化合作。同时,与三星类似,SK海力士也在积极推进3D垂直堆叠方案,将HBM直接置于计算模块之上,以突破现有封装架构的带宽和能效瓶颈。

六 |
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Published on:17:05:26



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